Complex issues stemming from near-threshold computing, where the operating voltage and threshold voltage are very close together, are becoming more common at each new node. In fact, there are reports ...

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

Siliconix Inc., a subsidiary of Vishay Intertechnology Inc., has released n-channel MOSFETs that combine a high 3.4 V threshold voltage with on-resistance as low as 2.7 milliOhms. The 10 new MOSFETs, ...

On October 11, Taiwan's National Yang Ming Chiao Tung University (NYCU) announced a groundbreaking research achievement in collaboration with TSMC, which has been published in the prestigious journal ...

Siliconix has introduced a series of n-channel MOSFETs that combine a high 3.4-V threshold voltage (VTH) with on-resistance (RDS(ON)) as low as 2.7 mΩ Siliconix has introduced a series of n-channel ...

Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...